Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode
Identifieur interne : 00E394 ( Main/Repository ); précédent : 00E393; suivant : 00E395Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode
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Abstract
We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode</title><author><name sortKey="Koga, Takaaki" uniqKey="Koga T">Takaaki Koga</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 Japan</s1></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa</wicri:regionArea><wicri:noRegion>NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 Japan</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Electrical and Computer Engineering, Purdue University, West Lafayette</wicri:cityArea></affiliation></author><author><name sortKey="Nitta, Junsaku" uniqKey="Nitta J">Junsaku Nitta</name></author><author><name sortKey="Takayanagi, Hideaki" uniqKey="Takayanagi H">Hideaki Takayanagi</name></author><author><name sortKey="Datta, Supriyo" uniqKey="Datta S">Supriyo Datta</name></author></titleStmt><publicationStmt><idno type="inist">02-0146918</idno><date when="2002-03-25">2002-03-25</date><idno type="stanalyst">PASCAL 02-0146918 AIP</idno><idno type="RBID">Pascal:02-0146918</idno><idno type="wicri:Area/Main/Corpus">00FA81</idno><idno type="wicri:Area/Main/Repository">00E394</idno></publicationStmt><seriesStmt><idno type="ISSN">0031-9007</idno><title level="j" type="abbreviated">Phys. rev. lett.</title><title level="j" type="main">Physical review letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Electron spin polarization</term><term>Filters</term><term>Gallium arsenides</term><term>Indium compounds</term><term>Instrumentation</term><term>Resonant tunneling diodes</term><term>Spin-orbit interactions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7225H</term><term>7340E</term><term>7340G</term><term>Appareillage</term><term>Diode effet tunnel résonnant</term><term>Gallium arséniure</term><term>Indium composé</term><term>Aluminium composé</term><term>Filtre</term><term>Interaction spin orbite</term><term>Polarisation spin électronique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0031-9007</s0></fA01><fA02 i1="01"><s0>PRLTAO</s0></fA02><fA03 i2="1"><s0>Phys. rev. lett.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode</s1></fA08><fA11 i1="01" i2="1"><s1>KOGA (Takaaki)</s1></fA11><fA11 i1="02" i2="1"><s1>NITTA (Junsaku)</s1></fA11><fA11 i1="03" i2="1"><s1>TAKAYANAGI (Hideaki)</s1></fA11><fA11 i1="04" i2="1"><s1>DATTA (Supriyo)</s1></fA11><fA14 i1="01"><s1>NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 Japan</s1></fA14><fA14 i1="02"><s1>School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907</s1></fA14><fA20><s2>126601-126601-4</s2></fA20><fA21><s1>2002-03-25</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>8895</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0146918</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. 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